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HSC285
Silicon Schottky Barrier Diode for High frequency detection
REJ03G0011-0100Z Rev.1.00 Apr.16.2003
Features
* Low forward voltage, Low capacitance and High detection sensitivity. * Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC285 Laser Mark C4 Package Code UFP
Pin Arrangement
Cathode mark Mark 1
C4
2 1. Cathode 2. Anode
Rev.1.00, Apr.16.2003, page 1 of 5
HSC285
Absolute Maximum Ratings
(Ta = 25C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 2 5 125 -55 to +125 Unit V mA C C
Electrical Characteristics
(Ta = 25C)
Item Forward voltage Symbol VF1 VF2 Capacitance ESD-Capability * Note:
1
Min -- -- -- 10
Typ -- -- 0.3 --
Max 0.15 0.27 -- --
Unit V
Test Condition IF = 0.1 mA IF = 1 mA VR = 1 V, f = 1 MHz C = 200 pF, RL = 0 , Both forward and reverse direction 1 pulse.
C --
pF V
1. Failure criterion ; IR > 100 A at VR = 0.5 V
Rev.1.00, Apr.16.2003, page 2 of 5
HSC285
Main Characteristic
10-2 10-2
Reverse current IR (A)
Forward current IF (A)
10-3
10-3
Ta = 75C
10-4
10-4
Ta = 25C
10-5
10-5
10-6
0
0.1
0.2
0.3
0.4
0.5
10-6
0
1
2
3
4
5
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
1.0 Reverse voltage VR (V)
10
Fig.3 Capacitance vs. Reverse voltage
Rev.1.00, Apr.16.2003, page 3 of 5
HSC285
Package Dimensions
As of January, 2003
Unit: mm
1.2 0.10 1.6 0.10
0.13 0.05
0.6 0.10
0.3 0.05 0.8 0.10
Package Code JEDEC JEITA Mass (reference value)
UFP -- Conforms 0.0016 g
Rev.1.00, Apr.16.2003, page 4 of 5
HSC285
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Copyright (c) 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.
Colophon 0.0
Rev.1.00, Apr.16.2003, page 5 of 5

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